STW50NB20 n - channel 200v - 0.047 w - 50a - to-247 powermesh ? mosfet n typical r ds(on) = 0.047 w n extremely high dv/dt capability n 30v gate to source voltage rating n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage technology, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest r ds (on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram october 1999 1 2 3 to-247 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 200 v v dgr drain- gate voltage (r gs =20k w ) 200 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c50a i d drain current (continuous) at t c = 100 o c32a i dm ( ? ) drain current (pulsed) 200 a p tot total dissipation at t c =25 o c280w derating factor 2.24 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 50 a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds(on) i d STW50NB20 200 v < 0.055 w 50 a 1/8 .com .com .com 4 .com u datasheet
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.44 30 0.1 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 50 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 1000 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 200 v i dss zero g ate voltage drain current (v gs =0) v ds =maxrating v ds = max rating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d = 25 a 0.047 0.055 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 50 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d = 25 a 10 17 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 3400 900 125 pf pf pf STW50NB20 2/8 .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 100 v i d =25a r g =4.7 w v gs =10v (see test circuit, figure 3) 35 65 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v i d =50a v gs =10v 84 26 44 115 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 160 v i d =50a r g =4.7 w v gs =10v (see test circuit, figure 5) 18 27 50 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 50 a a v sd ( * ) forward on voltage i sd =50a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 50 a di/dt = 100 a/ m s v dd =50v t j = 150 o c (see test circuit, figure 5) 330 3.5 21 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STW50NB20 3/8 .com .com .com .com 4 .com u datasheet
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STW50NB20 4/8 .com .com .com .com 4 .com u datasheet
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STW50NB20 5/8 .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW50NB20 6/8 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data STW50NB20 7/8 .com .com .com .com 4 .com u datasheet
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STW50NB20 8/8 .com .com .com 4 .com u datasheet
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